vishay siliconix SI4158DY new product document number: 69054 s-82775-rev. a, 17-nov-08 www.vishay.com 1 n-channel 20-v (d-s) mosfet features ? halogen-free ? trenchfet ? power mosfet ? 100 % r g tested ? 100 % uis tested applications ? low-side mosfet for synchronous buck ? or-ing product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) 20 0.0025 at v gs = 10 v 36.5 40 nc 0.003 at v gs = 4.5 v 33.3 so- 8 sd sd sd gd 5 6 7 8 top v ie w 2 3 4 1 orderin g information: si415 8 dy-t1-ge3 (lead (p b )-free and halogen-free) n -channel mosfet g d s notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 85 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 16 continuous drain current (t j = 150 c) t c = 25 c i d 36.5 a t c = 70 c 27 t a = 25 c 25.8 b, c t a = 70 c 20.5 b, c pulsed drain current i dm 70 continuous source-drain diode current t c = 25 c i s 5.4 t a = 25 c 2.7 b, c single pulse avalanche current l = 0.1 mh i as 40 avalanche energy e as 80 mj maximum power dissipation t c = 25 c p d 6.0 w t c = 70 c 3.3 t a = 25 c 3.0 b, c t a = 70 c 1.9 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 10 s r thja 33 42 c/w maximum junction-to-foot (drain) steady state r thjf 16 21
www.vishay.com 2 document number: 69054 s-82775-rev. a, 17-nov-08 vishay siliconix SI4158DY new product notes: a. pulse test; pulse width 300 s, duty cycle 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 v v ds temperature coefficient v ds /t j i d = 250 a 24 mv/c v gs(th) temperature coefficient v gs(th) /t j - 5.4 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 2.1 v gate-source leakage i gss v ds = 0 v, v gs = 16 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a v ds = 20 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.002 0.0025 v gs = 4.5 v, i d = 10 a 0.0024 0.003 forward transconductance a g fs v ds = 10 v, i d = 20 a 120 s dynamic b input capacitance c iss v ds = 10 v, v gs = 0 v, f = 1 mhz 5710 pf output capacitance c oss 1000 reverse transfer capacitance c rss 505 total gate charge q g v ds = 10 v, v gs = 10 v, i d = 20 a 88 132 nc v ds = 10 v, v gs = 4.5 v, i d = 20 a 40 60 gate-source charge q gs 11.5 gate-drain charge q gd 9.0 gate resistance r g f = 1 mhz 0.2 0.8 1.6 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 1 i d ? 10 a, v gen = 4.5 v, r g = 1 37 70 ns rise time t r 20 35 turn-off delay time t d(off) 68 120 fall time t f 32 60 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 1 i d ? 10 a, v gen = 10 v, r g = 1 13 25 rise time t r 11 22 turn-off delay time t d(off) 49 90 fall time t f 816 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 5.4 a pulse diode forward current a i sm 70 body diode voltage v sd i s = 2.7 a 0.71 1.1 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 29 44 ns body diode reverse recovery charge q rr 21 32 nc reverse recovery fall time t a 16 ns reverse recovery rise time t b 13
document number: 69054 s-82775-rev. a, 17-nov-08 www.vishay.com 3 vishay siliconix SI4158DY new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 14 2 8 42 56 70 0.0 0.5 1.0 1.5 2.0 2.5 v gs =10thr u 3 v v gs =2 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.0015 0.0019 0.0023 0.0027 0.0031 0.0035 0142 8 42 56 70 v gs =10 v v gs =4.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 01 8 36 54 72 90 i d =20a v ds =10 v v ds =5 v v ds =15 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.3 0.6 0.9 1.2 1.5 012345 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d c rss 0 1400 2 8 00 4200 5600 7000 04 8 12 16 20 c iss c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 v gs =10 v v gs =4.5 v i d =15a t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on)
www.vishay.com 4 document number: 69054 s-82775-rev. a, 17-nov-08 vishay siliconix SI4158DY new product typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s - 0. 8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a i d =5ma v ariance ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.000 0.002 0.004 0.006 0.00 8 0.010 01234567 8 910 t j =25 c t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 40 8 0 120 160 200 0 1 1 1 0 0 . 00.01 time(s) po w er ( w ) 0.1 safe operating area, junction-to-ambient 0.01 100 1 100 0.01 0.1 1ms 10 ms 1s 10 s 0.1 1 10 10 t a = 25 c single p u lse limited b yr ds(on) * dc b v dss limited 100 ms v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d
document number: 69054 s-82775-rev. a, 17-nov-08 www.vishay.com 5 vishay siliconix SI4158DY new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 8 16 24 32 40 0 25 50 75 100 125 150 t c - case temperat u re (c) i d - drain c u rrent (a) power, junction-to-foot 0.0 1.5 3.0 4.5 6.0 7.5 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) power, junction-to-ambient 0.0 0.4 0. 8 1.2 1.6 2.0 0 25 50 75 100 125 150 t a -am b ient temperat u re (c) po w er ( w )
www.vishay.com 6 document number: 69054 s-82775-rev. a, 17-nov-08 vishay siliconix SI4158DY new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69054 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 8 5 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 0.05 0.02 single p u lse
vishay siliconix package information document number: 71192 11-sep-06 www.vishay.com 1 dim millimeters inches min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0808 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all le a d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (g a ge pl a ne) s oic (narrow): 8-lead jedec p a rt n u m b er: m s -012 s
application note 826 vishay siliconix www.vishay.com document number: 72606 22 revision: 21-jan-08 application note recommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) return to index return to index
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